vorl?ufige daten preliminary data t c =70c i c,nom. 20 a t c = 25 c i c 26 a min. typ. max. - 1,95 2,55 v - 2,20 - v date of publication: 2002-12-17 revision: 2.0 v ce = 0v, v ge = 20v, t vj = 25c reverse transfer capacitance ma v ce = q g 600 v, v ge = 0v, t vj = 25c rckwirkungskapazit?t v ce = v ge , t vj = 25c, i c = 0,5 nf - 0,08 f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v - c res prepared by: p. kanschat kollektor emitter reststrom approved: m. hierholzer collector emitter cut off current v ges repetitive peak forward current v cesat charakteristische werte / characteristic values periodischer spitzenstrom v r = 0v, t p = 10ms, t vj = 125c isolations prfspannung rms, f= 50hz, t= 1min transistor wechselrichter / transistor inverter kv v ces v a i crm v isol v a2s w a technische information / technical information FS20R06XL4 igbt-module igbt-modules v ge = 15v, t vj = 125c, i c = i c,nom eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v gate charge gate emitter spitzenspannung gate schwellenspannung gate emitter peak voltage dauergleichstrom kollektor emitter s?ttigungsspannung dc forward current insulation test voltage v ge = 15v, t vj = 25c, i c = i c,nom dc collector current h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung kollektor dauergleichstrom collector emitter voltage elektrische eigenschaften / electrical properties t vj = 25 c periodischer kollektor spitzenstrom p tot t c = 25c, transistor gesamt verlustleistung total power dissipation t p = 1ms, t c = 70 a repetitive peak collector current 73 i f c t p = 1ms i frm v nf 0,9 - 0,11 - c 5,5 6,5 - - 4,5 - - i ges i ces na gate emitter leakage current gate emitter reststrom - 400 i2t value i2t v ge(th) c ies grenzlastintegral collector emitter saturation voltage gateladung v ge = -15v...+15v gate threshold voltage 2,5 600 40 89 + 20 20 40 -5ma 1 (8)
vorl?ufige daten preliminary data technische information / technical information FS20R06XL4 igbt-module igbt-modules min. typ. max. i c = 20 13 - 20 - ns 13 - 21 - ns i c = 20 13 - 7 - ns 13 - 8 - ns i c = 20 13 - 80 - ns 13 - 110 - ns i c = 20 13 - 18 - ns 13 - 25 - ns i c = 20 r g = 13 15 nh i c = 20 r g = 13 15 nh v cc = i f = 20 - 1,35 1,9 v i f = 20 - 1,30 - v i f = 20 a/s v r = -51- a v r = -53- a i f = 20 a/s v r = - 1,3 - c v r = - 2,0 - c i f = 20 a/s v r = - 0,40 - mj v r = - 0,55 - mj ? , t vj = 125c ? , t vj = 125c, l = ? , t vj = 125c, l = 360 v, v cemax =v ces -l ce |di/dt| 300 v a, v cc = 300 v v ge = 15v, r g = ? , t vj = 25c v ge = 15v, r g = ? , t vj = 125c v ge = 15v, r g = v ge = 15v, r g = ? , t vj = 25c a, v cc = 300 v v ge = 15v, r g = ? , t vj = 25c v ge = 15v, r g = ? , t vj = 125c v 300 a, v cc = 300 v ? , t vj = 125c v ge = 15v, r g = v ge = 15v, r g = ? , t vj = 25c charakteristische werte / characteristic values transistor wechselrichter / transistor inverter t d,on anstiegszeit (induktive last) rise time (inductive load) t r einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) 300 v a, v cc = v f forward voltage rckstromspitze peak reverse recovery current i rm durchlassspannung a, v cc = t f a, v cc = m ? charakteristische werte / characteristic values mj -mj e on 0,65 t d,off - r cc/ee t c = 25c sc data leitungswiderstand, anschluss-chip lead resistance, terminal-chip - - 0,45 - - - 8 q r e rec diode wechselrichter / diode inverter ausschaltenergie pro puls reverse recovery energy turn off energy loss per pulse fallzeit (induktive last) fall time (inductive load) einschaltverlustenergie pro puls a kurzschlussverhalten t p 10sec, v ge 15v, t vj = 125c, i sc - e off 90 2700 300 v, v ge = -10v, t vj = 25c 300 v, v ge = -10v, t vj = 125c a, -di f /dt = a, -di f /dt = 300 v, v ge = -10v, t vj = 25c stray inductance module modulinduktivit?t l ce turn on energy loss per pulse ausschaltverlustenergie pro puls 2700 a, v ge = 0v, t vj = 125c nh - 25 - sperrverz?gerungsladung recovered charge 300 v, v ge = -10v, t vj = 125c 300 v, v ge = -10v, t vj = 125c a, v ge = 0v, t vj = 25c a, -di f /dt = 2700 300 v, v ge = -10v, t vj = 25c 2 (8)
vorl?ufige daten preliminary data technische information / technical information FS20R06XL4 igbt-module igbt-modules min. typ. max. - - 1,40 k/w - - 2,30 k/w - 1,65 - k/w - 2,75 - k/w - 0,45 - k/w - 0,75 - k/w r thch thermal resistance, case to heatsink, dc diode wechselrichter / diode inverter paste = 1 w/m*k / grease = 1 w/m*k g weight g25 gewicht innere isolation internal insulation cti comperative tracking index f creepage distance abweichung von r 100 t c = 25c p 25 power dissipation r thjh thermal resistance, junction to heatsink; dc h?chstzul?ssige sperrschichttemp. - k ? thermische eigenschaften / thermal properties -5 - 5 verlustleistung t c = 100c, r 100 = 493 ? ? r/r -5 r 25 w?rmewiderstand; dc transistor wechselr. / transistor inverter diode wechselrichter / diode inverter b-value deviation of r 100 % charakteristische werte / characteristic values ntc-widerstand / ntc-thermistor nennwiderstand t c = 25c rated resistance mw 150 mechanische eigenschaften / mechanical properties b-wert r 2 = r 1 exp[b(1/t 2 - 1/t 1 )] b 25/50 - 3375 - k 20 -- -40 - - - c c terminal to terminal al 2 o 3 mm - 125 20..50 storage temperature operation temperature maximum junction temperature 125 t vjmax t op t stg -40 betriebstemperatur innerer w?rmewiderstand; dc thermal resistance, junction to case; dc transistor wechselr. / transistor inverter diode wechselrichter / diode inverter lagertemperatur paste = 1 w/m*k / grease = 1 w/m*k bergangs-w?rmewiderstand, dc transistor wechselr. / transistor inverter kriechstrecke anschluss - khlk?rper anschluss - anschluss 10,5 anschluss - anschluss luftstrecke anschluss - khlk?rper anpresskraft pro feder mounting force per clamp terminal to terminal clearance distance terminal to heatsink mm mm 5mm 5 9 c terminal to heatsink n r thjc 225 3 (8)
vorl?ufige daten preliminary data technische information / technical information FS20R06XL4 igbt-module igbt-modules i c = f(v ce ) v ge = 15v output characteristic (typical) output characteristic (typical) t vj = 125c ausgangskennlinienfeld (typisch) i c = f(v ce ) ausgangskennlinie (typisch) 0 10 20 30 40 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 10 20 30 40 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge = 20v vge = 15v vge = 12v vge = 10v vge = 9v vge = 8v 4 (8)
vorl?ufige daten preliminary data technische information / technical information FS20R06XL4 igbt-module igbt-modules i c = f(v ge ) v ce = 20v bertragungscharakteristik (typisch) transfer characteristic (typical) durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward characteristic of inverse diode (typical) 0 10 20 30 40 5 6 7 8 9 10 11 12 13 v ge [v] i c [a] tvj = 25c tvj = 125c 0 10 20 30 40 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8)
vorl?ufige daten preliminary data technische information / technical information FS20R06XL4 igbt-module igbt-modules e on = f(i c ), e off = f(i c ), e rec = f(i c ) v ge = 15v, r gon =r goff = 13 ? , v ce = 300v, t vj = 125c e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge = 15v, i c = 20a, v ce = 300v, t vj = 125c schaltverluste (typisch) switching losses (typical) schaltverluste (typisch) switching losses (typical) 0 1 2 3 0 5 10 15 20 25 30 35 40 i c [a] e [mj] eon eoff erec 0 1 2 0 20 40 60 80 100 120 r g [ ? ] e [mj] eon eoff erec 6 (8)
vorl?ufige daten preliminary data technische information / technical information FS20R06XL4 igbt-module igbt-modules transienter w?rmewiderstand transient thermal impedance i r i [k/kw]: igbt i [s]: igbt r i [k/kw]: diode i [s]: diode sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) 550,0 1540,0 495,0 0,00031 0,00508 0,10706 0,14371 z thjh = f (t) 123 4 v ge =15v, t j =125c, r g = 13 ? 99,0 330,0 924,0 297,0 0,00043 0,00942 0,11831 0,17410 165,0 0 20 40 0 200 400 600 v ce [v] i c [a] ic, chip ic, modul 0,10 1,00 10,00 0,001 0,01 0,1 1 10 t (s) z thjh (k/w) zth:igbt zth:diode 7 (8)
vorl?ufige daten preliminary data technische information / technical information FS20R06XL4 igbt-module igbt-modules mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. schaltbild circuit diagram ? geh?usema?e package outline bohrplan drilling layout 8 (8)
|
